Regensburg 2010 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 31: Poster I: Devices, Quantum Dots and Quantum Wires

HL 31.7: Poster

Dienstag, 23. März 2010, 18:30–20:30, Poster D1

High-gain integrated inverters based on ZnO MESFET technology — •Friedrich Schein, Heiko Frenzel, Alexander Lajn, Holger von Wenckstern, Michael Lorenz, and Marius Grundmann — Universität Leipzig, Fakultät für Physik und Geowissenschaften, Institut fürExperimentelle Physik II, Linnéstr. 5, 04103 Leipzig

We combine Schottky diodes and metal-semiconductor field-effect transistors (MESFETs), both based on ZnO and MgZnO thin films grown by pulsed-laser deposition, to fabricate integrated inverters. The MESFETs exhibit low switching voltages which are about one order of magnitude smaller than that for metal-insulator-semiconductor FETs, channel mobilities up to 27 cm²/Vs and with that faster switching speeds [1]. The integrated circuit design approach used here is known from GaAs technology as Schottky diode FET logic (SDFL) [2]. Our SDFL inverters show high peak gain values up to 197 at 3 V operating voltage and low uncertainty levels in the range of 0.13 V. By adding one additional Schottky diode, we successfully fabricated a NOR-gate, allowing the creation of a complete ZnO-based logic.

[1] H. Frenzel et al., Appl. Phys. Lett., 92, 192108 (2008)

[2] R. C. Eden et al., IEEE JSSC SC-13, 419 (1978)