Regensburg 2010 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 32: Poster I: Group II - Oxides
HL 32.20: Poster
Tuesday, March 23, 2010, 18:30–20:30, Poster D1
Electrical characterization of defects in MgZnO thin films grown by pulsed-laser deposition — •Kerstin Brachwitz, Holger von Wenckstern, Matthias Schmidt, Christof P. Dietrich, Marko Stölzel, Michael Lorenz, and Marius Grundmann — Universität Leipzig, Institut für Experimentelle Physik II, Linnéstraße 5, 04103 Leipzig
We present electrical investigations on MgxZn1−xO semiconductor alloys, grown by pulsed-laser deposition. The Mg-content in the samples ranged from 0% to 40%. We investigated the structural and electrical properties of the thin films in dependence on the Mg-content. Furthermore we monitored changes of the activation energy of defect states after annealing for 30 minutes at different temperatures (500∘C, 700∘C and 900∘C) in 700 mbar oxygen. High quality Schottky contacts were realized by reactive dc-sputtering of Pd. These Schottky diodes were used to investigate shallow and deep defect states using depletion layer spectroscopy. The thermal activation energy and the capture cross-section of the E3 defect have been determined in dependence on the Mg-content [1]. Shallow defects, already known in ZnO [2] were also observed in MgZnO and correlated with near band edge recombination spectra.
[1] H. von Wenckstern et al., J. Electron. Mater., DOI: 10.1007/s11664-009-0967-0 (2009)
[2] F. D. Auret et al., J. Phys. Conf. Ser. 100, 042038 (2008)