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Regensburg 2010 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 32: Poster I: Group II - Oxides

Dienstag, 23. März 2010, 18:30–20:30, Poster D1

18:30 HL 32.1 Parameter-free calculations of electronic properties and optical transitions of MgO, ZnO, and CdO — •André Schleife, Claudia Rödl, Frank Fuchs, and Friedhelm Bechstedt
18:30 HL 32.2 Oxygen vacancy and nitrogen substitutional in ZnO: An ab initio study — •Fabian Hachenberg, André Schleife, Jürgen Furthmüller, and Friedhelm Bechstedt
18:30 HL 32.3 First principles calculation of inter- and intra-band Auger recombination rates in ZnMgO — •Markus Heinemann and Christian Heiliger
18:30 HL 32.4 Ab initio studies on the structural parameters of ZnMgO alloys — •Marcel Giar, Markus Heinemann, and Christian Heiliger
18:30 HL 32.5 Capacsim - numerical modelling of the capacitance of a current-free Schottky diode — •Matthias Schmidt, Martin Ellguth, Holger v. Wenckstern, Rainer Pickenhain, and Marius Grundmann
18:30 HL 32.6 Spin Noise Spectroscopy of ZnO — •Hauke Horn, Xavier Marie, Andrea Balocchi, Jens Hübner, and Michael Oestreich
18:30 HL 32.7 Investigation of piezoelectric and thermoelectric properties of ZnO microstructures — •Irina Laubenstein, Marcel Ruth, Alexander M. Bernhart, Johannes Schaffert, Christian A. Bobisch, Rolf Möller, and Cedrik Meier
18:30 HL 32.8 Transport properties of ZnO along a- and c-crystallographic directions — •Christian H. Will, Matthias T. Elm, Sebastian Eisermann, Stefan Lautenschläger, Bruno K. Meyer, and Peter J. Klar
18:30 HL 32.9 Investigations on the stability of zinc oxide based metal-semiconductor field-effect transistors — •Michael Lorenz, Heiko Frenzel, Alexander Lajn, Holger von Wenckstern, Holger Hochmuth, and Marius Grundmann
18:30 HL 32.10 Space-charge regions in ZnO-based metal-semiconductor field-effect transistors and metal-semiconductor-metal photodetectors — •Zhipeng Zhang, Michael Lorenz, Lucie Behnke, Christian Czekalla, Heiko Frenzel, Gisela Biehne, Holger Hochmuth, Holger von Wenckstern, and Marius Grundmann
18:30 HL 32.11 Growth and doping of ZnO nanorods — •Cornelius Thiele, Janos Sartor, Felix Eilers, Jonas Conradt, Claus Klingshirn, and Heinz Kalt
18:30 HL 32.12 ZnO-based Nanowire Structures and Heterostructures — •Martin Lange, Christof Peter Dietrich, Christian Czekalla, Michael Lorenz, and Marius Grundmann
18:30 HL 32.13 Growth and characterization of ZnO- and ZnO:P-microwires — •Christof P. Dietrich, Martin Lange, Jan Zippel, Jörg Lenzner, Michael Lorenz, and Marius Grundmann
18:30 HL 32.14 Implantationsuntersuchungen von 100Pd in ZnO und GaN — •Patrick Keßler, Heiko Timmers, Aidan P. Byrne, Mark Ridgway und Reiner Vianden
18:30 HL 32.15 Sputter deposited gallium doped ZnO for TCO applications — •Marc Dietrich, Achim Kronenberger, Angelika Polity, Bruno Meyer, Jürgen Bläsing, and Alois Krost
18:30 HL 32.16 Properties of hydrogen doped ZnO films prepared by RF magnetron sputtering — •Achim Kronenberger, Marc Kostantin Dietrich, Steve Petznick, Daniel Horn, Andreas Laufer, Jan Eric Stehr, Angelika Polity, Detlev Michael Hofmann, and Bruno Karl Meyer
18:30 HL 32.17 Influence of ion-beam etching on the transport properties and the structural quality of microstructured zinc-oxide layers — •Markus Piechotka, Martin Fischer, Torsten Henning, Bruno K. Meyer, and Peter J. Klar
18:30 HL 32.18 Nitrogen Doping of Homoepitaxial a-plane ZnO — •Sebastian Eisermann, Stefan Lautenschlaeger, Michael Hofmann, Melanie Pinnisch, Andreas Laufer, Peter Jens Klar, and Bruno Karl Meyer
18:30 HL 32.19 Nitrogen incorporation in ZnO thin films grown by chemical vapour deposition (CVD) — •Michael N. Hofmann, Stefan Lautenschlaeger, Sebastian Eisermann, Udo Roemer, Melanie Pinnisch, Andreas Laufer, Swen Graubner, Peter J. Klar, and Bruno K. Meyer
18:30 HL 32.20 Electrical characterization of defects in MgZnO thin films grown by pulsed-laser deposition — •Kerstin Brachwitz, Holger von Wenckstern, Matthias Schmidt, Christof P. Dietrich, Marko Stölzel, Michael Lorenz, and Marius Grundmann
18:30 HL 32.21 Laplace-transform deep-level transient spectroscopy in ZnO thin films — •Florian Schmidt, Holger von Wenckstern, Matthias Schmidt, Martin Ellguth, and Marius Grundmann
18:30 HL 32.22 Defekt-Komplexbildung nach Ionenimplantation in ZnO — •Valentin Germic, Patrick Keßler und Reiner Vianden
18:30 HL 32.23 Optical properties of transition metal doped ZnO — •Stephanie Jankowski, Limei Chen, Jonatan Helzel, Shuangli Ye, Carsten Ronning, Detlev Schulz, Birk Heimbrodt, Detlef Klimm, and Wolfram Heimbrodt
18:30 HL 32.24 Photocurrent measurements of a- and c-plane oriented ZnO layers — •Richard K. Thöt, Thomas Sander, Sebastian Eisermann, Stefan Lautenschläger, Bruno K. Meyer, and Peter J. Klar
18:30 HL 32.25 The refractive index of zinc oxide microwire single crystalsChristian Czekalla, Philipp Kühne, Chris Sturm, •Rüdiger Schmidt-Grund, and Marius Grundmann
18:30 HL 32.26 Photolumineszenz- und Transmissionsmessungen an ZnO/MgZnO-Quantengrabenstrukturen — •Johannes Kupper, Alexander Müller, Gabriele Benndorf, Martin Lange, Matthias Brandt, Michael Lorenz und Marius Grundmann
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