Regensburg 2010 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe
HL: Fachverband Halbleiterphysik
HL 32: Poster I: Group II - Oxides
HL 32.23: Poster
Dienstag, 23. März 2010, 18:30–20:30, Poster D1
Optical properties of transition metal doped ZnO — •Stephanie Jankowski1, Limei Chen1, Jonatan Helzel1, Shuangli Ye2, Carsten Ronning3, Detlev Schulz4, Birk Heimbrodt4, Detlef Klimm4, and Wolfram Heimbrodt1 — 1Fachbereich Physik, Philipps-Universität Marburg, Renthof 5, D-35032, Germany — 2Institute of Microelectronics and Information Technology, Wuhan University, Wuhan 430072, China — 3Physikalisch-Astronomische Fakultät, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, D-07743 Jena — 4Leibniz-Institut für Kristallzüchtung, Max-Born-Str. 2 D-12489 Berlin, Germany
Various optical spectroscopy techniques have been used to investigate Co and Mn doped ZnO. Two series of samples were prepared for both (Zn,Co)O and (Zn,Mn)O. One series of ZnCoO thin films was grown by UHV-magnetron reactive sputtering and the other consists of ion implanted ZnO wires on a silicon substrate. The Mn doped series were fabricated by diffusion or by ion implantation of Mn in ZnO bulk material. The Mn and Co doped samples exhibit distinct differences in optical properties. In the case of the (Zn,Co)O the intern 3d transitions can be seen in PL as well as in absorption spectra. A broad Mn induced band is observable below the band gap in the absorption of the Mn doped samples. Details will be discussed at the poster.