DPG Phi
Verhandlungen
Verhandlungen
DPG

Regensburg 2010 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 32: Poster I: Group II - Oxides

HL 32.20: Poster

Dienstag, 23. März 2010, 18:30–20:30, Poster D1

Electrical characterization of defects in MgZnO thin films grown by pulsed-laser deposition — •Kerstin Brachwitz, Holger von Wenckstern, Matthias Schmidt, Christof P. Dietrich, Marko Stölzel, Michael Lorenz, and Marius Grundmann — Universität Leipzig, Institut für Experimentelle Physik II, Linnéstraße 5, 04103 Leipzig

We present electrical investigations on MgxZn1−xO semiconductor alloys, grown by pulsed-laser deposition. The Mg-content in the samples ranged from 0% to 40%. We investigated the structural and electrical properties of the thin films in dependence on the Mg-content. Furthermore we monitored changes of the activation energy of defect states after annealing for 30 minutes at different temperatures (500C, 700C and 900C) in 700 mbar oxygen. High quality Schottky contacts were realized by reactive dc-sputtering of Pd. These Schottky diodes were used to investigate shallow and deep defect states using depletion layer spectroscopy. The thermal activation energy and the capture cross-section of the E3 defect have been determined in dependence on the Mg-content [1]. Shallow defects, already known in ZnO [2] were also observed in MgZnO and correlated with near band edge recombination spectra.

[1] H. von Wenckstern et al., J. Electron. Mater., DOI: 10.1007/s11664-009-0967-0 (2009)

[2] F. D. Auret et al., J. Phys. Conf. Ser. 100, 042038 (2008)

100% | Mobil-Ansicht | English Version | Kontakt/Impressum/Datenschutz
DPG-Physik > DPG-Verhandlungen > 2010 > Regensburg