Regensburg 2010 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 32: Poster I: Group II - Oxides

HL 32.24: Poster

Tuesday, March 23, 2010, 18:30–20:30, Poster D1

Photocurrent measurements of a- and c-plane oriented ZnO layers — •Richard K. Thöt, Thomas Sander, Sebastian Eisermann, Stefan Lautenschläger, Bruno K. Meyer, and Peter J. Klar — I. Physikalisches Institut, Justus-Liebig-Universität Gießen, Heinrich-Buff-Ring 16, 35392 Gießen, Germany

We present in-plane photocurrent measurements of CVD-grown ZnO layers on different substrates. The measurements were performed at temperatures in the range from 80 K to 300 K. The spectra yield information about the influence of strain and crystal orientation on the interband transitions. At liquid nitrogen temperature a finestructure of the photocurrent response is visible due to transitions from multiple valence band energies. In another experiment we recorded photocurrent spectra using linearly polarized probe light varying the polarization angle. For a-plane grown ZnO samples the photocurrent confirms the expected anisotropy of the semiconductor layers. The finestructure of the valence band can be studied and the orientation of the c-axis within the layer can be determined.