Regensburg 2010 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 36: Ge, GeSi, and Si
HL 36.4: Vortrag
Mittwoch, 24. März 2010, 10:15–10:30, H14
Influence of electronic energy deposition on structural modification of SHI irradiated amorphous Ge layers — •Tobias Steinbach1, Werner Wesch1, Claudia S. Schnohr1, Leandro L. Araujo2, Raquel Giulian2, David J. Sprouster2, and Mark C. Ridgway2 — 1Institute of Solid State Physics, Friedrich Schiller University Jena — 2Department of Electronic Materials Engineering, Australian National University, Canberra
During SHI irradiation of amorphous Ge a strong swelling of the amorphous layer accompanied by an enhanced plastic flow process was observed in previous studies. To study the effect of high electronic energy deposition єe on amorphous Ge layers in more detail the samples were irradiated with 185 and 89 MeV Au ions with different incident angles. In order to quantify the swelling and the plastic flow process, a grid of Au was evaporated on the sample surface and one half of the sample was masked to distinguish the irradiated from the unirradiated reference. We demonstrate for all used irradiation conditions that a strong swelling of the irradiated areas can be observed, which depends linearly on the ion fluence as well as on єe. XSEM revealed the transformation of the initially homogeneous amorphous Ge layer into a sponge-like porous structure with irregularly shaped voids thus establishing that swelling was a consequence of void formation. Moreover, an electronic energy deposition threshold has been estimated, at which the swelling, i.e. the formation of voids, begins. In addition, the ion beam induced plastic flow process is directly apparent in the XSEM and will be discussed as a function of the ion fluence and єe.