Regensburg 2010 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 4: Photovoltaics I: mainly CIGS
HL 4.2: Vortrag
Montag, 22. März 2010, 10:30–10:45, H15
CdS-Photodoping in Quantum Efficiency Spectra of Chalcopyrite Thin Film Solar Cells — •Heiner Lendzian1, Janet Neerken1, Martin Knipper1, Ingo Riedel1, Jürgen Parisi1, Stefan Jost2, Thomas Dalibor2, Jörg Palm2, and Alejandro Avellán2 — 1Energy- and Semiconductor Research Laboratory, Department of Physics, Carl von Ossietzky University of Oldenburg, D-26111 Oldenburg, Germany — 2AVANCIS GmbH & Co. KG, Otto-Hahn-Ring 6, Gebäude 31, D-81739 Munich, Germany
Understanding the electronic properties of the CdS buffer layer typically employed in chalcopyrite thin film solar cells is a key challenge in the pursuit of high device performance. Photodoping of the CdS layer appears to alter the conduction band offset at the CdS/absorber interface by more than 100meV and causes substantial changes in the spectral shape of the external quantum efficiency under forward voltage bias. This contribution examines the nature of CdS-photodoping by means of quantum efficiency measurements for varied temperatures, photon flux densities and excitation frequencies. Rapid photodoping is linked to hole traps inside the CdS buffer similar to those believed to be responsible for cross-over in current-voltage-measurements. The results emphasize the strong influence of CdS-photodoping on chalcopyrite solar cell performance and grant insight into its dynamic nature.