Regensburg 2010 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 4: Photovoltaics I: mainly CIGS
HL 4.4: Vortrag
Montag, 22. März 2010, 11:00–11:15, H15
Optoelectronic properties of Cu(In,Ga)(S,Se)2 thin film solar obtained from varied chalcogenization processes — •Robin Knecht, Martin Knipper, Ingo Riedel, and Jürgen Parisi — Energy and Semiconductor Research Laboratory, Department of Physics, University of Oldenburg, 26111 Oldenburg, Germany
Thin film solar cells made of the chalcopyrite compound semiconductor Cu(In,Ga)(S,Se)2 (CIGSSe) exhibit strong potential for achieving high efficiency at relatively low production costs. While large scale production of CIGSSe-modules has been launched in different companies the transfer of high laboratory cell efficiencies to the module scale is still a major challenge. In order to improve module efficiencies optimisation of the large scale production process presents a major issue.
In this work the influence of chalcogenization (selenisation and sulfurisation) parameter variation on the device characteristics was studied using temperature and illumination dependent current-voltage profiling, external quantum efficiency measurements as well as temperature dependent capacitance-voltage measurements. From these measurements we derived important characteristics of the light absorber like activation energy of the recombination current, estimation of the absorber band gap as well as the doping concentration along with the diffusion potential. These studies were completed by defect spectroscopy for analysis of defect formation in the absorber material. The results obtained from these investigations are compared for samples exposed to different conditions of the chalcogenization process.