Regensburg 2010 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 41: Quantum Dots and Wires: Preparation and Characterization II

HL 41.2: Vortrag

Mittwoch, 24. März 2010, 11:15–11:30, H13

Electrochemical analysis of Si and Mg doped GaN nanowires — •Jens Wallys¹, Sascha Hoffmann¹, Florian Furtmayr^1,2, Markus Schäfer¹, Jörg Teubert¹, Jörg Schörmann¹, and Martin Eickhoff¹ — ¹I. Physikalisches Intstitut, Justus-Liebig-Universität Gießen, Germany — ²Walter Schottky Institut, Garching, Germany

Due to their high electrochemical stability and the large surface-to-volume ratio, GaN nanowires are promising candidates for applications in the field of photocatalytic water splitting and electrochemical sensors. We have analyzed the electrochemical properties of non intentionally doped, Si-doped and Mg-doped GaN nanowires grown on Si (111) substrates by plasma assisted molecular beam epitaxy.

Bias dependent electrochemical impedance spectroscopy measurements and comparison to an equivalent circuit model allowed extraction of the nanowire electronic properties. The influence of doping on the carrier type and density in the nanowires is discussed.