Regensburg 2010 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 41: Quantum Dots and Wires: Preparation and Characterization II
HL 41.3: Vortrag
Mittwoch, 24. März 2010, 11:30–11:45, H13
Vertical and lateral heterostructure of GaN/InGaN within nanowires — •Friederich Limbach1, Tobias Gotschke1, Toma Stoica1, Raffaella Calarco1, Eli Sutter2, Ramon Cusco3, and Luis Artus3 — 1Institute of Bio- and Nanosystems (IBN-1), Research Center Jülich GmbH, D-52425 Jülich, Germany, and JARA-Fundamentals of Future Information Technology — 2Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973, USA — 3Institut Jaume Almera, Consell Superior d'Investigacions Científiques (CSIC), 08028 Barcelona, Catalonia, Spain
A vertical and lateral GaN/InGaN heterostructure within a nanowire has been grown by plasma assisted molecular beam epitaxy. The resulting wires have a complex morphology which results from a combination of vertical and lateral heterostructure interfaces. Photoluminescence indicates Indium content in the InGaN alloy of approximately 30 % and evidences in addition a high quality of the GaN nanowire. Raman investigation based on the analysis of the LO peak position and its shape reveal a composition variation between 20 % and 30 %. XRD measurements show a peak with an onset at 17.26° that extends to 16.6° also suggesting a spread in compositions. Transmission electron microscopy analysis indicates composition variations along the wire growth direction. In addition insight is gained about the position of the heterointerfaces. This allows an understanding of the complex shape of the nanowire.