Regensburg 2010 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 48: Semiconductor Lasers

HL 48.6: Vortrag

Donnerstag, 25. März 2010, 10:45–11:00, H13

Monolithic electro-optically modulated vertical cavity surface emitting laser — •Jan-Hindrik Schulze¹, Tim D. Germann¹, Alex Mutig¹, Alexey M. Nadtochy¹, James A. Lott², Sergey A. Blokhin¹, Vitaly A. Shchukin², Nikolay N. Ledentsov², Udo W. Pohl¹, and Dieter Bimberg¹ — ¹Inst. für Festkörperphysik, EW 5-2, Hardenbergstr. 36, TU-Berlin, 10623 Berlin — ²VI-Systems GmbH, Hardenbergstr. 7, 10623 Berlin

The steadily growing data traffic requires high speed and low-cost laser diodes. Conventional current modulated vertical cavity surface emitting lasers (VCSEL) are limited in their bit rate due to a quadratic increase in the current density with the bit rate. Monolithically integrated electro-optic modulator (EOM) VCSEL promise to overcome this problem. In this work we demonstrate a GaAs-based 850 nm EOM-VCSEL. The VCSEL is driven continuously while the pulsed light output is generated by reflectivity modulation of the top DBR through an embedded EOM section. A very low modulation voltage (< 2 V) is needed to reach -3 dB extinction ratio enabling the use of such EOM-VCSELs with low power consumption CMOS drivers. Excellent output stability at a significant extinction ratio is demonstrated up to 85°C. A similar extinction ratio was revealed in large-signal modulation experiments at frequencies presently up to 3 GHz. Thus the first high bit rate data transmission by an EOM-VCSEL is demonstrated.