Regensburg 2010 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 49: Optical Properties
HL 49.8: Vortrag
Donnerstag, 25. März 2010, 11:30–11:45, H14
Optical characterization of AgGaSe2 thin films grown by Chemical Close Spaced Vapor Transport (CCSVT) — •Christoph Merschjann1, Barys Korzun1,2, Anastasia Karkatzinou1,3, Thomas Schedel-Niedrig1, and Martha Christina Lux-Steiner1 — 1Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Berlin, Germany — 2Scientific-Practical Materials Research Centre of NAS of Belarus, Minsk, Belarus — 3National Technical University of Athens, Athens, Greece
Thin films (d ≈ 3 µm) of n-type chalcopyrite AgGaSe2 were successfully grown on glass and glass/molybdenum substrates using the technique of Chemical Close Spaced Vapor Transport (CCSVT). Scanning electron microscopy of the prepared layers shows a morphology typical for polycrystalline chalcopyrites. The electronic properties of the films are investigated by means of optical transmission/reflection and photoluminescence spectroscopy. While the absorption spectra of the films exhibit clear and distinct bandgaps, their photoluminescence comprises various unreported emission peaks, thus pointing to a rich intrinsic defect structure.
The results are compared to those published for single-crystalline AgGaSe2, and possible consequences for the application of this material as thin-film solar cell absorber layer are discussed in the presentation.