Regensburg 2010 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 56: Non- and Semi-polar Group-III-Nitrides
HL 56.5: Vortrag
Donnerstag, 25. März 2010, 15:00–15:15, H15
Influence of stacking faults on the optical properties of m-plane GaInN quantum wells — •Holger Jönen1, Uwe Rossow1, Heiko Bremers1, Torsten Langer1, Daniel Dräger1, Lars Hoffmann1, Sebastian Metzner2, Frank Bertram2, Jürgen Christen2, Lukas Schade3, Ulrich T. Schwarz3, and Andreas Hangleiter1 — 1Institut für Angewandte Physik, TU Braunschweig — 2Institut für Experimentelle Physik, Otto-von-Guericke-Universität Magdeburg — 3Institut für Angewandte und Experimentelle Physik, Universität Regensburg
In the past few years GaN-based light emitting devices grown on non-polar planes have continuously attracted increasing attention due to their promising optical properties. While conventional structures grown on the polar c-plane suffer from the quantum-confined Stark effect (QCSE) non-polar structures are free from polarization fields in growth direction and thus might be more efficient. However, without defect reduction techniques heteroepitaxy of non- or semi-polar layers commonly results in high densities of threading dislocations and stacking faults. In this contribution we report on the optical properties of m-plane GaInN quantum wells grown on m-plane SiC. A reduced bandgap energy and the presence of two emission lines, which we attribute to basal and prismatic stacking faults, respectively, indicate that the optical properties are dominated by regions where stacking faults intersect the quantum wells. Quantum-wire-like states formed at these intersections may provide an effective carrier confinement resulting in high internal quantum efficiencies up to 45%.