Regensburg 2010 – wissenschaftliches Programm
HL 60.18: Poster
Donnerstag, 25. März 2010, 18:00–20:00, Poster D1
Low-temperature dielectric function of a-plane MgxZn1−xO — •David Schumacher, Rüdiger Schmidt-Grund, Philipp Kühne, Helena Hilmer, Holger Hochmuth, and Marius Grundmann — Universität Leipzig, Fakultät für Physik und Geowissenschaften, Institut für Experimentelle Physik II, Linnéstr. 5, 04103 Leipzig, Germany
The object of our investigation is the temperature dependent dielectric function of MgxZn1−xO (x < 0.1) thin films. It has been obtained by means of spectroscopic ellipsometry in the energy range of 1 - 4.5 eV and at temperatures between 10 K and 470 K. The a-oriented MgxZn1−xO thin films were deposited by pulsed laser deposition (PLD) on r-oriented sapphire (Al2O3) substrate. All measurements were performed under UHV conditions (p < 10−9 mbar) in order to prevent an accumulation of ice and residual gases on the sample surface. Since previous experiments had shown a degradation of the surface quality due to the high-temperature measurements under UHV conditions, all samples were passivated by an amorphous 60 nm thick YSZ (Yttria-stabilized zirconia) layer.
The independent components of the dielectric tensor parallel ε∥ and perpendicular ε⊥ to the crystal axis were found by layer stack model analysis using parameterized model dielectric functions. We derived the temperature and alloy dependence of the near band gap band-to-band transition energies, exciton binding energies and broadening parameters.