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HL: Fachverband Halbleiterphysik

HL 60: Poster II: Optical Properties, incl. Photonic Crystals and Ultrafast Phenomena

HL 60.28: Poster

Donnerstag, 25. März 2010, 18:00–20:00, Poster D1

Disorder effects in Ga(AsBi) — •Sebastian Imhof¹, Alexej Chernikov², Sangam Chatterjee², Xianfeng Lu³, Shane Johnson³, Dan Beaton⁴, Thomas Tiedje⁵, Oleg Rubel⁶, Angela Thränhardt¹, and Stephan W. Koch² — ¹Technische Universität Chemnitz, Deutschland — ²Philipps-Universität Marburg, Deutschland — ³Arizona State University, USA — ⁴University of British Columbia, Kanada — ⁵University of Victoria, Kanada — ⁶Lakehead University and Thunder-Bay Regional Research Institute, Kanada

The incorporation of Bi into GaAs reduces the band gap by as much as 60–80 meV per percent Bi. Thus a wide wavelength range in the near and middle infrared region can be reached and Ga(AsBi) is a serious candidate for many applications e.g. diode lasers.

The photoluminesence of the present Ga(AsBi) samples show an S-shape and the PL linewidth has a maximum at intermediate temperatures. These are typical indications of disorder effects on a very large energy scale. We describe the disorder effects using a kinetic Monte-Carlo simulation. In order to characterize the disorder effects we use experimental time-integrated and time-resolved data and compare these to our theoretical results.