Regensburg 2010 – wissenschaftliches Programm
HL 60.30: Poster
Donnerstag, 25. März 2010, 18:00–20:00, Poster D1
Investigations of crystal defects at low temperatures by cathodoluminescence measurements — •Stefan Saager, Matthias Allardt, Ellen Hieckmann, and Jörg Weber — Professur für Halbleiterphysik, Institut für Angewandte Physik, TU Dresden, D-01062 Dresden
Cathodoluminescence (CL) investigations in a scanning electron microscope with a field emission gun offer the possibility to analyse the structure of semiconductor materials and, to localize the origin of luminescence simultaneously.
We studied plastically deformed n-type silicon single crystals with dislocation slip lines on the sample surface. Several emission bands in the IR-range, the so called D-lines, could be observed by CL measurements at low temperatures. These bands can be correlated with certain crystal defects within the dislocations. Attempts will be described to improve the intensity of the D-lines.