Regensburg 2010 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe
HL: Fachverband Halbleiterphysik
HL 61: Poster II: Materials, Interfaces and Heterostructures
HL 61.31: Poster
Donnerstag, 25. März 2010, 18:00–20:00, Poster D1
Fabrication and characterization of heterostructure LEDs based on the material system MgZnO/AlGaN — •Julian Benz1, Sebastian Eisermann1, Torsten Henning1, Peter J. Klar1, Bruno K. Meyer1, Theeradetch Detchprohm2, and Christian M. Wetzel2 — 1I. Physikalisches Institut, Justus-Liebig-Universität, Heinrich-Buff-Ring 16, 35392 Giessen, Germany — 2Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, 110 Eighth Street, Troy, NY 12180-3590, U.S.A.
The wide band gap semiconductors ZnO and GaN and their related alloys are interesting materials for the production of blue and ultraviolet optoelectronic devices, such as light emitting diodes (LEDs), laser diodes and photo diodes. Active regions based on ZnO may further improve the efficiency of current short wavelength devices based on GaN and InGaN due to the higher exciton binding energy in ZnO. We report on the growth, fabrication, optical and electrical characterization of heterostructures based on the MgZnO/AlGaN material system, which can be seen as a first step towards more sophisticated devices including MgZnO/ZnO quantum wells in the active region.