Regensburg 2010 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 62: Poster II: Photovoltaics and Organic Semiconductors

HL 62.29: Poster

Donnerstag, 25. März 2010, 18:00–20:00, Poster D2

Investigations of defects after indiffusion of iron and nickel into float-zone silicon — •Philipp Saring, Nils Hildebrand, Marie Aylin Falkenberg, and Michael Seibt — IV.Physikalisches Institut der Georg-August-Universität, Friedrich-Hund-Platz 1, D-37077 Göttingen, Germany

The electrical properties of silicon are strongly influenced by fast diffusing transition metal impurities such as iron, nickel and copper, which are unintentionally brought into and distributed inside the material during high temperature treatments. Under certain conditions these metals cluster by forming recombination active silicide precipitates. Whereas homogeneous precipitation has been observed for nickel or copper, iron precipitation generally requires the presence of pre-existing nucleation sites. Recent studies deal with the simultaneous coprecipitation of these elements.

In this work we focus on the distribution of the electrically active defects after indiffusion of nickel and iron into float-zone silicon. We investigate the recombination properties of these defects by LBIC- and EBIC-measurements as well as their concentration and majority charge carrier kinetics by DLTS experiments. By suitable annealing conditions we established quite small concentrations of precipitates (<10⁸ cm⁻³) and metal denuded zones below the sample surfaces. Single precipitates were extracted by Focussed-Ion-Beam technique for TEM-investigations.