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Regensburg 2010 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 65: GaN-based Devices

HL 65.9: Talk

Friday, March 26, 2010, 12:30–12:45, H15

Recording glycolytic oscillations in yeast cells using AlGaN/GaN high electron mobility transistor (HEMT) — •Christian Warnke1, Hartmut Witte1, Thomas Mair2, Marcus J. B. Hauser2, and Alois Krost11Otto-von-Guericke-Universität Magdeburg, Inst. Exp. Phys., Abt. Halbleiterepitaxie — 2Otto-von-Guericke-Universität Magdeburg, Inst. Exp. Phys., Abt. Biophysik

Glycolytic oscillations in yeast cells are a well documented example of a macroscopic oscillator in biology. Methods for recording the glycolytic oscillations are the measurement of the NADH-fluorescence and impedance of a planar yeast cell/blank metal electrode interface [1]. As a new approach we used the source-drain-current and the impedance of a gateless AlGaN/GaN High Electron Mobility Transistor (HEMT) with different insulating surface layers. We show that these HEMTs exhibit a strong dependence of their resistance and capacitance when electrolytic solutions with different conductance and pH-values are placed on these HEMTs. We have measured the dielectric behavior of living yeast cells with these HEMTs. The measured period agrees well with results from control measurements via optical methods. We detected that the fluorescence of the yeast cells strongly enhances the signal output of the HEMTs. It was found that this signal enhancement results from photosensitivity of the insulating Durimide layer.

[1] Reiher, A. et al.: Electrical stimulation of the energy metabolism in yeast cells using planar Ti-Au-Electrode interface, J. Bioenerg. Biomembr. 38 (2006), 143-148.

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