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Regensburg 2010 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 65: GaN-based Devices

Freitag, 26. März 2010, 10:15–12:45, H15

10:15 HL 65.1 Calculation of optical eigenmodes and gain in semipolar and nonpolar InGaN/GaN laser diodes — •Wolfgang Scheibenzuber and Ulrich Schwarz
10:30 HL 65.2 Anisotropy in semipolar InGaN laser diodes: Consequences for resonator design and facet formation — •Jens Rass, Tim Wernicke, Wilfred John, Sven Einfeldt, Patrick Vogt, Markus Weyers, and Michael Kneissl
10:45 HL 65.3 GaN-based laser structure with semipolar InGaN QWs realized by selective area epitaxy — •Thomas Wunderer, Johannes Biskupek, Andrey Chuvilin, Ute Kaiser, Yakiv Men, Junjun Wang, Frank Lipski, Stephan Schwaiger, Kamran Forghani, and Ferdinand Scholz
11:00 HL 65.4 Heterostructure design optimisation of (In)AlGaN deep ultraviolet light emitting diodes — •T. Kolbe, T. Sembdner, A. Knauer, V. Küller, H. Rodriguez, S. Einfeldt, P. Vogt, M. Weyers, and M. Kneissl
11:15 HL 65.5 GaN-based LEDs on 200 mm diameter substratesAdam Boyd, Hannes Behmenburg, Olaf Rockenfeller, Bernd Schineller, and •Michael Heuken
  11:30 15 Min. Coffee Break
11:45 HL 65.6 Electrical and Optical Characteristics of GaN based MSM Photodetectors — •Martin Martens, Jessica Schlegel, Patrick Vogt, Frank Brunner, Richard Lossy, Joachim Würfl, Markus Weyers, and Michael Kneissl
12:00 HL 65.7 Quantum corrections to the Drude conductivity in AlxGa1−xN/GaN two-dimensional electron gas — •Stepan Shvarkov, Andreas Jupe, Dirk Reuter, and Andreas D. Wieck
12:15 HL 65.8 Long term investigations of neuronal cell cultures with AlGaN/GaN-based HEMTs — •H. Witte, C. Warnke, T. Voigt, A. de Lima, and A. Krost
12:30 HL 65.9 Recording glycolytic oscillations in yeast cells using AlGaN/GaN high electron mobility transistor (HEMT) — •Christian Warnke, Hartmut Witte, Thomas Mair, Marcus J. B. Hauser, and Alois Krost
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