Regensburg 2010 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 65: GaN-based Devices
HL 65.9: Vortrag
Freitag, 26. März 2010, 12:30–12:45, H15
Recording glycolytic oscillations in yeast cells using AlGaN/GaN high electron mobility transistor (HEMT) — •Christian Warnke1, Hartmut Witte1, Thomas Mair2, Marcus J. B. Hauser2, and Alois Krost1 — 1Otto-von-Guericke-Universität Magdeburg, Inst. Exp. Phys., Abt. Halbleiterepitaxie — 2Otto-von-Guericke-Universität Magdeburg, Inst. Exp. Phys., Abt. Biophysik
Glycolytic oscillations in yeast cells are a well documented example of a macroscopic oscillator in biology. Methods for recording the glycolytic oscillations are the measurement of the NADH-fluorescence and impedance of a planar yeast cell/blank metal electrode interface [1]. As a new approach we used the source-drain-current and the impedance of a gateless AlGaN/GaN High Electron Mobility Transistor (HEMT) with different insulating surface layers. We show that these HEMTs exhibit a strong dependence of their resistance and capacitance when electrolytic solutions with different conductance and pH-values are placed on these HEMTs. We have measured the dielectric behavior of living yeast cells with these HEMTs. The measured period agrees well with results from control measurements via optical methods. We detected that the fluorescence of the yeast cells strongly enhances the signal output of the HEMTs. It was found that this signal enhancement results from photosensitivity of the insulating Durimide layer.
[1] Reiher, A. et al.: Electrical stimulation of the energy metabolism in yeast cells using planar Ti-Au-Electrode interface, J. Bioenerg. Biomembr. 38 (2006), 143-148.