Regensburg 2010 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 65: GaN-based Devices
HL 65.5: Vortrag
Freitag, 26. März 2010, 11:15–11:30, H15
GaN-based LEDs on 200 mm diameter substrates — Adam Boyd1, Hannes Behmenburg1,2, Olaf Rockenfeller1, Bernd Schineller1, and •Michael Heuken1,2 — 1AIXTRON AG, Herzogenrath, Germany — 2Inst. f. Theoretische Elektrotechnik, RWTH-Aachen, Aachen, Germany
We report on the growth of GaN-based structures on 200 mm sapphire and silicon by MOCVD using a CRIUS® Close Coupled Showerhead® reactor. The temperature profile was monitored in real time using an ARGUS pyrometer scanner and continuously adapted by adjusting the power to the three radial heater zones. A deflectometer was used to monitor the wafer curvature in the radial direction. To gauge the uniformity of a GaN nucleation layer on sapphire a thick layer was grown under nucleation layer growth conditions (530∘C growth temperature, 900 mbar total pressure, 1 h duration). Ex-situ white-light interference measurements yielded a standard deviation of the thickness uniformity of 0.25% (6 mm edge exclusion). Under these conditions the uniformity approaches that of the gas phase delivery. Similar mapping of an LED structure gave 5.34 µm total thickness with a standard deviation over the wafer of 2.1%. The InGaN / GaN multiple quantum well peak wavelength uniformity was assessed by photoluminescence and indicated an average of 502 nm peak wavelength with a standard deviation of 10.7 nm. Results from an iteration of the edge design of the wafer recess as well as additional in-situ data and post growth material assessment will also be presented.