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MA: Fachverband Magnetismus
MA 18: Magnetic Thin Films II
MA 18.14: Vortrag
Mittwoch, 24. März 2010, 18:45–19:00, H3
Interdiffusion at a ferromagnetic/semiconductor interface: experiment and theory — •Anne Warland, Bernhard Krumme, Heike C. Herper, Claudia Weis, Carolin Antoniak, Frank Stromberg, Peter Entel, Werner Keune, and Heiko Wende — Fakultät für Physik und CeNIDE, Universität Duisburg-Essen
Fe3Si on GaAs is a promising ferromagnet/semiconductor system due to the low lattice mismatch of 0.1% . For this system, spin injection at room temperature has been demonstrated. A detailed understanding and control of the interface properties is necessary for future spintronic applications. We prepared 80 Å thick Fe3Si films on GaAs(001) and MgO(001). The film on MgO served as a reference for nearly perfectly ordered Fe3Si. The magnetic properties of the films were investigated by means of X-ray magnetic circular dichroism (XMCD) spectroscopy. In addition, conversion electron Mössbauer spectroscopy (CEMS) measurements were carried out to characterize the chemical ordering and the structural properties of the films. In case of Fe3Si/GaAs we obtained indications of an interdiffusion of substrate atoms at the interface [1]. We compare our experimental XAS and XMCD spectra with theoretically calculated spectra, which allow to disentangle the different contributions from the inequivalent Fe sites. In order to study the interdiffusion effects in detail, SPR-KKR calculations introducing different contents of Ga have been performed. –Supported by DFG(SFB491) and BMBF(05ES3XBA/5)
[1] B. Krumme et al., Phys. Rev. B 80, 144403 (2009)