Regensburg 2010 – wissenschaftliches Programm
MA 18.6: Vortrag
Mittwoch, 24. März 2010, 16:30–16:45, H3
Epitaxial Growth of Ni on Si Substrate by DC Magnetron Sputtering — •Wolfgang Kreuzpaintner, Michael Störmer, Dieter Lott, Danica Solina, and Andreas Schreyer — GKSS Forschungszentrum Geesthacht, GmbH, Max-Planck-Straße 1, 21502 Geesthacht, Germany
The influence of the substrate temperature on the growth of highly textured Ni(111) and epitaxial Ni(200) with the epitaxial relationship Ni||Si and Ni(001)||Si(001) on hydrogen terminated Si(100) wafer substrates by means of direct current magnetron sputtering will be reported. To minimize crystal defect formation and in order to achieve a high quality epitaxial growth of Ni on Si a two step deposition process was developed whereby different deposition conditions were used for an initial nickel seed layer and the remaining nickel. In-plane and out-of-plane structural properties of the deposited films were investigated using x-ray scattering techniques whereas magneto-optical Kerr effect and neutron reflectometry were used to confirm their magnetic nature. Additionally, first results on the currently investigated epitaxial growth of Ni on Si with the Ni(111) in out-of-plane direction may be reported.