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Regensburg 2010 – wissenschaftliches Programm

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MM: Fachverband Metall- und Materialphysik

MM 56: Topical Session Growth Kinetics VI

MM 56.1: Vortrag

Donnerstag, 25. März 2010, 15:30–15:45, H4

Computational analysis of interfacial attachment kinetics and transport phenomena during liquid phase epitaxy of mercury cadmium tellurideIgal Rasin1, Anne Ben Dov2, Ilana Grimberg2, Olga Klin2, Eliezer Weiss2, and •Simon Brandon11Dept. of Chemical Engineering, Technion, Haifa 32000, Israel — 2SCD-Semi-Conductor Devices, P.O. Box 2250/99, Haifa 31021, Israel

Deposition of mercury cadmium telluride (MCT) thin films, on lattice matched cadmium zinc telluride substrates, is often achieved via Liquid Phase Epitaxy (LPE). The yield and quality of these films, required for the production of infrared detector devices, is to a large extent limited by lack of knowledge regarding details of physical phenomena underlying the deposition process. Improving the understanding of these phenomena and their impact on the quality of the resultant films is therefore an important goal which can be achieved through relevant computational and/or experimental studies.

We present a combined computational and experimental effort aimed at elucidating physical phenomena underlying the LPE of MCT via a slider growth process. The focus of the presentation will be results generated by a time-dependent three-dimensional model of mass transport, fluid flow, and interfacial attachment kinetics, which we have developed and applied in the analysis of this LPE process. These results, combined with experimental analyses, lead to an improved understanding of the role of different transport and kinetic phenomena underlying this growth process.

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