Regensburg 2010 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 26: Oxides and insulators: Clean surfaces
O 26.2: Vortrag
Dienstag, 23. März 2010, 10:45–11:00, H40
The valence band structure of β−Ga2O3 single crystals — •Mansour Mohamed1, Christoph Janowitz1, Zbigniew Galazka2, Reinhard Uecker2, Roberto Fornari2, and Recardo Manzke1 — 1Institut für Physik, Humboldt-Universität zu Berlin, Newtonstr. 15, 12489 Berlin, Germany — 2Leibniz-Institut für Kristallzüchtung, Max-Born-Str. 2, 12489 Berlin, Germany
The valence band structure of the (100) surface of high-quality β−Ga2O3 single crystals grown by the Czochralski method has been investigated by angle-resolved photoelectron spectroscopy utilizing He I and synchrotron radiation along the symmetry directions of the surface Brillouin zone. The surface of β−Ga2O3 single crystal was characterized by different techniques (LEED, Laue, and STM). From the ultraviolet photoemission spectra measured along the parallel directions of the Brillouin zone, it is found that the valence bands along (kb) and (kc) do not show so much dispersion. On the other hand, the measurements performed with synchrotron radiation to probe the direction normal to the surface (ka) indicate much stronger dispersion of the valence bands. The experimental valence band structure of β−Ga2O3 single crystals will be discussed and compared with theoretical results.