Regensburg 2010 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 38: Semiconductor substrates: clean surfaces
O 38.4: Vortrag
Dienstag, 23. März 2010, 15:45–16:00, H40
The role of Hydrogen for the formation of the GaP(001) surface — •Marcel Ewald1,2, Michael Kneissl1, Norbert Esser1,2, and Patrick Vogt1,2 — 1ISAS Berlin, Albert-Einstein-Str.9, 12489 Berlin, Germany — 2TU Berlin, Institut für Festkörperphysik, Hardenbergstr.36, 10623 Berlin, Germany
Previous investigation have shown that the preparation of InP(001)(2×1) refers to a hydrogen terminated surface structure which gives rise to a very specific zig-zag pattern in STM. Hence, it is formed under MOVPE growth conditions but not in standard MBE where no reactive hydrogen is present. Also for the GaP(001)(2×1) such structures have been observed by STM for MOVPE grown samples, suggesting a similar H-termination as found for the InP(001). However, it has not been shown that this surface structure is indeed stabilized by hydrogen. We have prepared GaP(001)(2×1) under MBE-like conditions under supply of activated hydrogen. We find that only under these conditions a (2×1) surface is observed giving rise to a RAS signature similar to the one under MOVPE conditions. This surface is explained by a H-terminated structure model similar to the InP(001)(2×1).