Regensburg 2010 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 41: Poster Session I (Semiconductor Substrates: Epitaxy and growth; Semiconductor Substrates: Adsorbtion; Semiconductor Substrates: Solid-liquid interfaces; Semiconductor Substrates: Clean surfaces; Oxides and insulators: Epitaxy and growth; Oxides and insulators: Adsorption; Oxides and insulators: Clean surfaces; Organic, polymeric and biomolecular films - also with adsorbates; Organic electronics and photovoltaics, Surface chemical reactions; Heterogeneous catalysis; Phase transitions; Particles and clusters; Surface dynamics; Surface or interface magnetism; Electron and spin dynamics; Spin-Orbit Interaction at Surfaces; Electronic structure; Nanotribology; Solid/liquid interfaces; Graphene; Others)
O 41.118: Poster
Dienstag, 23. März 2010, 18:30–21:00, Poster B1
Influence of charge on the Raman Spectrum of Epitaxial Graphene on Silicon Carbide — •Stephan Wittmann1, Jonas Röhrl1, Daniel Waldmann2, Johannes Jobst2, Florian Speck1, Markus Ostler1, Heiko Weber2, Martin Hundhausen1, and Thomas Seyller1 — 1Lehrstuhl für Technische Physik, Universität Erlangen-Nürnberg, Germany — 2Lehrstuhl für Angewandte Physik, Universität Erlangen-Nürnberg, Germany
Epitaxial graphene prepared on the surface of SiC wafers might be mechanically strained and electrically charged due to doping from the substrate. Raman spectroscopy can be employed for characterization of graphene layers due to influence of strain and charge on the frequencies of the Raman-active phonons. In order to differentiate between both effects on the prominent features in the Raman spectra (G-peak and 2D-peak) we employ a 6H-SiC wafer with an integrated back gate. By varying the electric field, applied on the graphene layer via a back gate, we change the charge state and accordingly some phonon frequencies. We show, that the variation of the back gate voltage influences the zone-center optical phonon (G-peak).