Regensburg 2010 – wissenschaftliches Programm

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O: Fachverband Oberflächenphysik

O 41: Poster Session I (Semiconductor Substrates: Epitaxy and growth; Semiconductor Substrates: Adsorbtion; Semiconductor Substrates: Solid-liquid interfaces; Semiconductor Substrates: Clean surfaces; Oxides and insulators: Epitaxy and growth; Oxides and insulators: Adsorption; Oxides and insulators: Clean surfaces; Organic, polymeric and biomolecular films - also with adsorbates; Organic electronics and photovoltaics, Surface chemical reactions; Heterogeneous catalysis; Phase transitions; Particles and clusters; Surface dynamics; Surface or interface magnetism; Electron and spin dynamics; Spin-Orbit Interaction at Surfaces; Electronic structure; Nanotribology; Solid/liquid interfaces; Graphene; Others)

O 41.16: Poster

Dienstag, 23. März 2010, 18:30–21:00, Poster B1

Si(100) surface preparation under VPE conditions — •Anja Dobrich, Henning Döscher, Sebastian Brückner, Christian Höhn, Peter Kleinschmidt, and Thomas Hannappel — Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin

The preparation of Si(100) surfaces in vapor phase environments (VPE) suitable for subsequent III-V epitaxy was characterized by surface sensitive instruments available through a dedicated sample transfer to ultra high vacuum (UHV). Using X-ray photoelectron spectroscopy (XPS) for inspection of the chemical surface composition, we verified the ability to obtain clean Si(100) free of oxygen or other contaminations. We checked the process extensively regarding reliability, influences of the process parameters (time, surface temperature, pressure and type of process gas, presence of precursors) and dependencies on type of substrate. Because the results obtained in alternative atmospheres (N₂ and Ar) differed from those in H₂, we considered an active role of the process gas in the removal of SiO₂-layers. Fourier-transform infrared spectroscopy (FTIR) proved the presence of Si-monohydrides while low energy electron diffraction confirmed a two-domain (2x1)/(1x2) reconstruction for all Si(100) surfaces. Since these results implied a predominance of single-layer steps undesirable for subsequent III-V layers, we investigated the atomic surface structure of the samples with scanning tunnelling microscopy (STM). Depending on the off-orientation, the images revealed complex step structures and opposing trends of partial double-layer step formation.