Regensburg 2010 – wissenschaftliches Programm

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O: Fachverband Oberflächenphysik

O 41: Poster Session I (Semiconductor Substrates: Epitaxy and growth; Semiconductor Substrates: Adsorbtion; Semiconductor Substrates: Solid-liquid interfaces; Semiconductor Substrates: Clean surfaces; Oxides and insulators: Epitaxy and growth; Oxides and insulators: Adsorption; Oxides and insulators: Clean surfaces; Organic, polymeric and biomolecular films - also with adsorbates; Organic electronics and photovoltaics, Surface chemical reactions; Heterogeneous catalysis; Phase transitions; Particles and clusters; Surface dynamics; Surface or interface magnetism; Electron and spin dynamics; Spin-Orbit Interaction at Surfaces; Electronic structure; Nanotribology; Solid/liquid interfaces; Graphene; Others)

O 41.2: Poster

Dienstag, 23. März 2010, 18:30–21:00, Poster B1

Growth of epitaxial micrometer-sized Cu- and Cu-Ni pyramides on Silicon — •Sarah Hoffmann, Benedikt Ernst, Regina Nowak, Susanne Seyffarth, and Hans-Ulrich Krebs — Institut für Materialphysik, Universität Göttingen, Friedrich-Hund-Platz 1, D-37077 Göttingen

Thin Cu and Cu-Ni films were prepared on Si(111) substrates using pulsed laser deposition (PLD) in ultra high vacuum. At elevated substrate temperatures above 200^∘C, either during deposition or afterwards, epitaxial growth of three dimensional pyramides with edge lengths of about five micrometers and heights up to 500 nm is observed using scanning electron microscopy (SEM) and atomic force microscopy (AFM). In the case of pure Cu, the base area of these islands is a triangle. With increasing Ni-content, shape changes occur, which can be explained by a reduction of surface diffusion. The influence of the SiO₂ layer thickness and the formation of a Cu-Si interlayer was studied by ellipsometry. The transformation of the Cu and Cu-Ni films into the pyramids during heating were studied by resistance and x-ray measurements.