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Regensburg 2010 – wissenschaftliches Programm

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O: Fachverband Oberflächenphysik

O 41: Poster Session I (Semiconductor Substrates: Epitaxy and growth; Semiconductor Substrates: Adsorbtion; Semiconductor Substrates: Solid-liquid interfaces; Semiconductor Substrates: Clean surfaces; Oxides and insulators: Epitaxy and growth; Oxides and insulators: Adsorption; Oxides and insulators: Clean surfaces; Organic, polymeric and biomolecular films - also with adsorbates; Organic electronics and photovoltaics, Surface chemical reactions; Heterogeneous catalysis; Phase transitions; Particles and clusters; Surface dynamics; Surface or interface magnetism; Electron and spin dynamics; Spin-Orbit Interaction at Surfaces; Electronic structure; Nanotribology; Solid/liquid interfaces; Graphene; Others)

O 41.56: Poster

Dienstag, 23. März 2010, 18:30–21:00, Poster B1

In-situ XRD studies on post deposition annealed iron oxide thin films — •Florian Bertram1, Carsten Deiter1, Kathrin Pflaum1, Oliver H. Seeck1, Martin Suendorf2, and Joachim Wollschläger21HASYLAB at DESY, Notkestr. 85, D-22607 Hamburg, Germany — 2Fachbereich Physik, Universität Osnabrück, Barbarastr. 7, D-49069 Osnabrück, Germany

Because of their magnetic properties, iron oxide thin films are of interest for spintronic devices. Also, they can be used for model catalyst studies. Due to the small lattice mismatch to all iron oxide phases, MgO is a good choice as a substrate.

Here, we present studies on highly oxidized iron oxide films epitaxially grown on MgO(001), which have been annealed under vacuum conditions at beamlines BW2, W1 and P08 at DESY. For this purpose a UHV sample cell with heating and cooling capacity was developed.

Before annealing the sample it was analyzed by XRR and XRD. During the annealing process we performed CTR scans at the (002)BULK MgO peak, where all iron phases also have peaks. After cooling down the sample it was again analyzed by XRR and XRD.

Our analysis of the XRD measurements using kinematic diffraction theory shows a decrease in the iron oxide lattice constant pointing to a reduction of the iron oxide film.

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