Regensburg 2010 – wissenschaftliches Programm

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O: Fachverband Oberflächenphysik

O 41: Poster Session I (Semiconductor Substrates: Epitaxy and growth; Semiconductor Substrates: Adsorbtion; Semiconductor Substrates: Solid-liquid interfaces; Semiconductor Substrates: Clean surfaces; Oxides and insulators: Epitaxy and growth; Oxides and insulators: Adsorption; Oxides and insulators: Clean surfaces; Organic, polymeric and biomolecular films - also with adsorbates; Organic electronics and photovoltaics, Surface chemical reactions; Heterogeneous catalysis; Phase transitions; Particles and clusters; Surface dynamics; Surface or interface magnetism; Electron and spin dynamics; Spin-Orbit Interaction at Surfaces; Electronic structure; Nanotribology; Solid/liquid interfaces; Graphene; Others)

O 41.7: Poster

Dienstag, 23. März 2010, 18:30–21:00, Poster B1

Influence of the pre-adsorption of group III metals on the growth of Ge nanostructures on vicinal Si surfaces — •Moritz Speckmann, Thomas Schmidt, Jan Ingo Flege, Inga Heidmann, Jan Höcker, Torsten Wilkens, and Jens Falta — Institute of Solid State Physics, University of Bremen

The employment of metals as surfactants (surface active agents) is a promising approach to influence the growth of Ge nanostructures on Si surfaces. Especially for group III and group V elements an enhanced or suppressed Stranski-Krastanov growth behaviour is found, respectively.

For all group III metal on silicon systems presented in this study we observe a drastic change of the surface morphology after adsorption of a few monolayers. For the investigations we used a variety of surface sensitive techniques, e.g., scanning tunneling microscopy (STM), spot profile analysing low-energy electron diffraction (SPA-LEED), low-energy electron microscopy (LEEM), and x-ray standing waves (XSW). On the one hand, the adsorption of Ga and In leads to a smoothening of the intrinsically unstable Si(112) surface and the development of 1D metal chains. But on the other hand, the stable Si(113) is decomposed into a regular array of nanofacets after adsorption of Ga. For all cases shown here the possibility of growing highly anisotropic Ge islands is demonstrated (Ga/Si(113) [1], Ga/Si(112) [2], In/Si(112)).
: Th. Schmidt et al., New J. Phys. 9, 392 (2007).
: M. Speckmann et al., J. Phys.: Condens. Matter 21, 314020 (2009).