Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe

O: Fachverband Oberflächenphysik

O 52: Graphene II

Mittwoch, 24. März 2010, 15:00–17:15, H31

15:00 O 52.1 Direct writing of 1 nm thin graphenoid nanoribbons and nanosieves — •Mark Schnietz, Andrey Turchanin, Christoph Nottbohm, André Beyer, Harun Solak, Peter Hinze, Thomas Weimann, and Armin Gölzhäuser
15:15 O 52.2 Decoupling epitaxial graphene from SiC(0001) surface by a germanium buffer layer — •Konstantin Emtsev and Ulrich Starke
15:30 O 52.3 SPM on epitaxial graphene on SiC — •Markus Duschl and Franz J. Giessibl
15:45 O 52.4 Defect-induced electron scattering and metal-insulator transition in grapheneAaron Bostwick, Jessica McChesney, Konstantin Emtsev, Thomas Seyller, •Karsten Horn, Stephen D. Kevan, and Eli Rotenberg
16:00 O 52.5 Quasi-free Standing Epitaxial Graphene on SiC by Hydrogen Intercalation — •Camilla Coletti, Christian Riedl, Takayuki Iwasaki, Alexei A. Zakharov, and Ulrich Starke
16:15 O 52.6 X-ray absorption and magnetic circular dichroism of graphene/Ni(111)Martin Weser, Yvonne Rehder, Karsten Horn, Muriel Sicot, Mikhail Fonin, Aleksej Preobrajenski, Elena Voloshina, and •Yuriy Dedkov
16:30 O 52.7 An ab initio study of graphenen nanoribbons doped with boron clustersCem Özdogan, •Jens Kunstmann, Alexander Quandt, and Holger Fehske
16:45 O 52.8 Effect of Noble-Metal Contacts on the Electronic Structure of Graphene — •Andrei Varykhalov, Markus R. Scholz, Timur K. Kim, and Oliver Rader
17:00 O 52.9 Resonant Raman scattering of chemically functionalized graphene — •Nils Scheuschner, Dimitrios Tasis, Kostas Papagelis, and Janina Maultzsch
100% | Bildschirmansicht | English Version | Kontakt/Impressum/Datenschutz
DPG-Physik > DPG-Verhandlungen > 2010 > Regensburg