Regensburg 2010 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 66: Nanotribology I
O 66.2: Vortrag
Donnerstag, 25. März 2010, 10:45–11:00, H36
Crystallographic Orientation Maps by Transverse Shear Microscopy (TSM) — •Quan Shen1, Gregor Hlawacek1, Markus Kratzer1, Heinz-Georg Flesch2, Thomas Potocar2, Roland Resel2, Adolf Winkler2, and Christian Teichert1 — 1Institute of Physics, University of Leoben, 8700 Austria — 2Institute of Solid State Physics, Graz University of Technology, 8010 Graz, Austria
For organic semiconductor devices (OTFTs, OLEDs and organic solar cells, etc.), the grain boundary and domain size of organic thin films have a strong effect on the final device performance [1]. In this work, we use transverse shear microscopy (TSM) to characterize crystallographic domains in a para-sexiphenyl (6P) polycrystalline thin layer [1] and a thiophene based self assembled monolayer (SAM). TSM is a special mode of conventional lateral force microscopy (LFM). The elastic anisotropy [2] in different crystallographic arrangements can be recognized by TSM sensitively. The generated TSM image can be considered as a Crystallographic Orientation Map to reveal information on shape, size, boundary and crystallographic orientation of domains in the molecular films.
This work is funded by Austrian Science Fund NFN "Organic Thin Films" Projects S9707, S9708 + P19197, and the SAMs are provided by Dago de Leeuw, Philips Research, Einhoven.
[1] G. Hlawacek, et al., Science, 2008, 321, 108-111.
[2] K. Puntambekar, et al., Adv. Funct. Mater. 2006, 16, 879-884.