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Regensburg 2010 – wissenschaftliches Programm

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O: Fachverband Oberflächenphysik

O 69: Symposium Polarization Field Control in Group-III-Nitrides

Donnerstag, 25. März 2010, 09:30–12:15, H1

09:30 O 69.1 Hauptvortrag: Growth and applications of N-polar (Al,Ga,In)N — •Stacia Keller and Umesh K Mishra
10:00 O 69.2 Hauptvortrag: Green light-emitting diodes and laser heterostructures on semi-polar GaN(11-22)/sapphire substrates — •Andre Strittmatter
10:30 O 69.3 Hauptvortrag: Pros and cons of green InGaN lasers on polar GaN substrates — •Uwe Strauss, Adrian Avramescu, Teresa Lermer, Jens Müller, Christoph Eichler, and Stephan Lutgen
  11:00 15 Min. Coffee Break
11:15 O 69.4 Hauptvortrag: Molecular beam epitaxy as a method for the growth of free-standing zinc-blende GaN layers and substrates. — •Sergei Novikov, Thomas Foxon, and Anthony Kent
11:45 O 69.5 Hauptvortrag: Three-dimensional GaN for semipolar light emitters — •Thomas Wunderer, Frank Lipski, Stephan Schwaiger, Ferdinand Scholz, Martin Feneberg, Klaus Thonke, Andrey Chuvilin, Ute Kaiser, Sebastian Metzner, Frank Bertram, Jürgen Christen, Clemens Vierheilig, and Ulrich Schwarz
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