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Regensburg 2010 – wissenschaftliches Programm

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O: Fachverband Oberflächenphysik

O 71: Metal substrates: Epitaxy and growth

O 71.2: Vortrag

Donnerstag, 25. März 2010, 15:15–15:30, H31

Study of the growth of bismuth thin film on graphite with STM and UPS at low temperatureFei Song, Justin Wells, Magne Saxegaard, Anne Borg, and •Erik Wahlstrøm — Department of Physics, Norwegian University of Science and Technology(NTNU),Trondheim 7491, Norway

Bismuth, a novel semimetal material, which has been widely studied recently as topological insulator in the form of alloy with some other metals. In this talk, we will foucs on the growth behaviour of Bi film from very thin coverage to thick layer at low temperature, in the light of scanning tunnelling microscopy (STM) and photoemission spectrocopy (PES), to have a close look at the interface morphology and electronic structure. Similar to other reports about Bi on Si substrate at critical coverage, interesting phenomenon, such as quantum well states will show up together with surface states which can be easily resolved from bulk states from the valce band.

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