Regensburg 2010 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe
SYNT: Symposium Nanotribology
SYNT 1: Symposium Nanotribology
SYNT 1.3: Hauptvortrag
Freitag, 26. März 2010, 11:15–11:45, H1
Wear on the nanoscale: mechanisms and materials — •Bernd Gotsmann1, Mark A. Lantz1, Harish Bhskaran1, Abu Sebastian1, Ute Drechsler1, Michel Despont1, Yun Chen2, Kumar Sridharan2, Papot Jaroenapibal3, and Robert Carpick3 — 1IBM Research - Zurich, Switzerland — 2University of Wisconsin-Madison, Madison, WI, USA — 3University of Pennsylvania, Philadelphia, USA
Endurance requirements in emerging probe technologies, such as probe based data storage and lithography, are extremely demanding. Tip lifetime has been viewed as an unsolved critical issue in this context.
We show, that on the nanoscale the complexity of wear can be simplified to a thermally activated bond breaking process in which the energy barrier is reduced by the frictional shear stress. The resulting atom-by-atom wear deviates strongly from macroscopic wear behavior. Model predictions agree well with wear data obtained using sharp tips sliding in contact with various surfaces at sliding distances up to hundreds of meters.
As an application alternative tip materials are studied: We fabricated a nanoscale silicon-doped Diamond-Like-Carbon tips using a plasma immersion ion implantation and deposition process in conjunction with a molding technique. Silicon carbide (SiC) is another interesting material, in particular for thermo-mechancial applications. Tips were made by a combination of carbon ion implantation and an anneal step.
For both, Si-DLC and SiC tips, we demonstrate an improvement over silicon of several orders of magnitude.