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Regensburg 2010 – scientific programme

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SYPN: Symposium Polarization Field Control in Group III-Nitrides

SYPN 1: Polarization Field Control in Group-III-Nitrides

Thursday, March 25, 2010, 09:30–12:15, H1

09:30 SYPN 1.1 Invited Talk: Growth and applications of N-polar (Al,Ga,In)N — •Stacia Keller and Umesh K Mishra
10:00 SYPN 1.2 Invited Talk: Green light-emitting diodes and laser heterostructures on semi-polar GaN(11-22)/sapphire substrates — •Andre Strittmatter
10:30 SYPN 1.3 Invited Talk: Pros and cons of green InGaN lasers on polar GaN substrates — •Uwe Strauss, Adrian Avramescu, Teresa Lermer, Jens Müller, Christoph Eichler, and Stephan Lutgen
  11:00 15 Min. Coffee Break
11:15 SYPN 1.4 Invited Talk: Molecular beam epitaxy as a method for the growth of free-standing zinc-blende GaN layers and substrates. — •Sergei Novikov, Thomas Foxon, and Anthony Kent
11:45 SYPN 1.5 Invited Talk: Three-dimensional GaN for semipolar light emitters — •Thomas Wunderer, Frank Lipski, Stephan Schwaiger, Ferdinand Scholz, Martin Feneberg, Klaus Thonke, Andrey Chuvilin, Ute Kaiser, Sebastian Metzner, Frank Bertram, Jürgen Christen, Clemens Vierheilig, and Ulrich Schwarz
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