Regensburg 2010 – wissenschaftliches Programm
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TT: Fachverband Tiefe Temperaturen
TT 12: CE: Metal-Insulator Transition 1
TT 12.4: Vortrag
Dienstag, 23. März 2010, 10:15–10:30, H19
Inequivalent routes across the metal-to-insulator transition in V2O3 — •Alessandro Toschi1, Philipp Hansmann1,2, Giorgio Sangiovanni1, Maurits Haverkort2, Tanusri Saha-Dasgupta3, Ole K. Andersen2, and Karsten Held1 — 1Institute of Solid State Physics, Vienna University of Technology — 2Max Planck Institute for Solid State Research, Stuttgart — 3S.N. Bose Centre for Basic Sciences, Kolkata (India)
The equivalence between the doping-driven and the pressure-driven metal-to-insulator transition, which was hitherto assumed in studies on Cr-doped V2O3, has been recently questioned by the results of novel optical and X-ray absorption spectroscopy experiments. Theoretical calculations, combining full multiplet cluster calculations and the merger of the local density approximation with the dynamical mean field theory (LDA+DMFT), shed light on the differences in the ground states of the two metallic phases obtained by reducing the Cr-doping or by applying pressure, and how these differences reflect in the results of different spectroscopic techniques[1].
[1] F. Rodolakis, P. Hansmann, J.-P. Rueff, A. Toschi, et al., submitted.