Regensburg 2010 – wissenschaftliches Programm
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TT: Fachverband Tiefe Temperaturen
TT 33: TR: Nanoelectronics I: Quantum Dots, Wires, Point Contacts 2
TT 33.11: Vortrag
Donnerstag, 25. März 2010, 16:45–17:00, H19
Tunneling into Nonequilibrium Luttinger Liquid with Impurity — •Stéphane Ngo Dinh1,2, Dmitry A. Bagrets3, and Alexander D. Mirlin1,2,3 — 1Institut für Theorie der Kondensierten Materie, Karlsruhe Institute of Technology (KIT), 76128 Karlsruhe, Germany — 2DFG Center for Functional Nanostructures, Karlsruhe Institute of Technology (KIT), 76128 Karlsruhe, Germany — 3Institut für Nanotechnologie, Karlsruhe Institute of Technology (KIT), 76021 Karlsruhe, Germany
We evaluate tunneling rates into/from a quantum wire containing a weak backscattering defect and biased by a voltage U. Interacting electrons in such a wire constitute a true nonequilibrium state of the Luttinger liquid (LL). This state is created due to inelastic electron backscattering leading to the emission of nonequilibrium plasmons with typical frequency ℏ ω ≤ eU. Using a real-time instanton approach we show that the tunneling rates are split into two edges. The tunneling exponent at the Fermi edge EF is positive and equals that of the equilibrium LL, while the exponent at the side edge EF−eU is negative if Coulomb interaction is not too strong. We also calculate the nonequilibrium dephasing rate that governs the smearing of the power-law singularities.
The approach developed here will be useful for the analysis of tunneling and interference in a broad class of nonequilibrium LL structures with impurities and/or tunneling couplings.