Regensburg 2010 – wissenschaftliches Programm

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TT: Fachverband Tiefe Temperaturen

TT 40: TR: Nanoelectronics III: Molecular Electronics 2

TT 40.1: Hauptvortrag

Freitag, 26. März 2010, 10:15–10:45, H20

Heating, Heat Conduction and Cooling in Molecular Junctions — •Abraham Nitzan¹, Michael Galperin², and Keiji Saito³ — ¹School of Chemistry, Tel Aviv University, Tel Aviv 69978, Israel — ²Department of Chemistry, University of California, La Jolla, CA, 92093, USA — ³Graduate School of Science, University of Tokyo, 113-0033, Japan

Heating in molecular conduction junction depends on the balance between the rate of heat deposit by the electronic current and the efficiency of heat conduction away from the junction. I will review our recent work on such processes, then focus on models for current induced cooling in such systems.