Dresden 2011 – scientific programme
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DS: Fachverband Dünne Schichten
DS 54: Nanoengineered Thin Films
DS 54.4: Talk
Thursday, March 17, 2011, 18:45–19:00, GER 38
Vertically contacting ultrathin semiconductor nanomembranes by rolled-up metallic contacts incorporating selective etching techniques. — •Dominic J. Thurmer1, Carlos Cesar Bof Bufon1, Christoph Deneke1, and Oliver G. Schmidt1,2 — 1IFW Dresden, Dresden, Germany — 2TU Chemnitz, Chemnitz, Germany
Merging modern self-assembly techniques with well established top-down processing methods is paving the way for more sophisticated device generations in the future. Nanomembranes, composed of many different material classes, have already been shown to provide the necessary framework for a diverse range of structures and devices incorporating wrinkling, buckling, folding and rolling of thin films. In the past decade, an elegant symbiosis of bottom-up and top-down methods has emerged to fabricate hybrid layer systems incorporating the controlled release and rearrangement of inherently strained layers. Using selective III-V etchants in combination with inherently strained layers we are able to fabricate structures which allow us to contact through single and multi-material semiconductor nanomembrane creating many devices in parallel and on the original semiconductor substrate. We demonstrate this technique by creating hybrid superconducting junctions created by sandwiching the semiconductor nanomembrane between two superconducting contacts. Using solely optical lithography techniques we are able to form junctions with lateral dimensions of a few micrometers and a semiconductor barrier thickness of down to 5 nm. D. J. Thurmer et al. Nano Lett. 10, 3704 (2010).