Dresden 2011 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 7: Layer Properties: Electrical, Optical and Mechanical Properties

DS 7.7: Vortrag

Montag, 14. März 2011, 19:15–19:30, GER 37

Ellipsometric study of copper growth on silicon — •Francisc Haidu, Ovidiu D. Gordan, and Dietrich R. T. Zahn — Chemnitz University of Technology, Semiconductor Physics, 09107 Chemnitz, Germany

Thin copper films are of high interest for interconnect applications. However, optical studies, such as ellipsometry, of metallic thin films are still rare as the measurements are difficult to interpret due to the lack of a transparent range and often island-like growth at very low cowerages. We investigated by in situ Spectroscopic Ellipsometry the growth of thermally evaporated thin copper films on silicon substrates from 0.5 nm to more than 100 nm, a thickness for which bulk-like response is observed. A strong change in the optical response was observed for films thinner than 10 nm as a result of plasmonic effects. For the interpretation of the spectra Effective Medium Approximation theory was employed using the thicker films as reference. Furthermore, copper oxidation was also studied. Here a pronounced change in the optical response is observed within the first 10 minutes of oxidation. Thereafter the response changes at a slower rate without reaching saturation.