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Dresden 2011 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 52: Nonpolar and Semipolar Nitrides

Wednesday, March 16, 2011, 11:45–13:15, POT 51

11:45 HL 52.1 Influence of Si-doping on heteroepitaxially grown a-plane GaN — •Matthias Wieneke, Barbara Bastek, Martin Noltemeyer, Thomas Hempel, Antje Rohrbeck, Harmut Witte, Peter Veit, Jürgen Bläsing, Armin Dadgar, Jürgen Christen, and Alois Krost
12:00 HL 52.2 Single phase semipolar (1122) GaN on (1010) sapphire — •S. Ploch, J. B. Park, J. Stellmach, T. Schwaner, M. Frentrup, T. Wernicke, T. Niermann, M. Pristovsek, M. Lehmann, and M. Kneissl
12:15 HL 52.3 Polarisation of the spontaneous emission from nonpolar and semipolar InGaN quantum wells — •Lukas Schade, Ulrich Schwarz, Simon Ploch, Tim Wernicke, Arne Knauer, Veit Hoffmann, Markus Weyers, and Michael Kneissl
12:30 HL 52.4 Spatially and spectrally resolved photoluminescence of InGaN MQWs grown on highly Si doped a-plane GaN buffer — •Martin Thunert, Matthias Wieneke, Anja Dempewolf, Frank Bertram, Armin Dadgar, Alois Krost, and Jürgen Christen
12:45 HL 52.5 Highly spatially and spectrally resolved cathodoluminescence microscopy of planar semipolar InGaN/GaN MQWs grown on pre-patterned sapphire substrate — •Silvio Neugebauer, Sebastian Metzner, Frank Bertram, Thomas Hempel, Jürgen Christen, Stephan Schwaiger, and Ferdinand Scholz
13:00 HL 52.6 Indium incorporation in GaInN quantum wells on various surface orientations — •Holger Jönen, Uwe Rossow, Heiko Bremers, Stephan Schwaiger, Ferdinand Scholz, Sebastian Metzner, Frank Bertram, Jürgen Christen, and Andreas Hangleiter
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