Berlin 2012 – wissenschaftliches Programm
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DF: Fachverband Dielektrische Festkörper
DF 13: Poster II
DF 13.10: Poster
Mittwoch, 28. März 2012, 15:00–17:30, Poster E
Correlation between structural and ferroelectric properties of BaTiO3 thin films — •Anja Herpers1, Regina Dittmann1, Daesung Park2, Joachim Mayer2, and Rainer Waser1 — 1Peter Grünberg Institut 7, Electronic Materials, Forschungszentrum Jülich GmbH, 52428 Jülich — 2Gemeinschaftslabor für Elektronenmikroskopie, RWTH Aachen University, Ahornstraße 55, 52074 Aachen
Point as well as extended defects in ferroelectric thin films are expected to have a strong influence on their ferroelectric properties. We investigated in detail the influence of growth conditions on the crystal structure of BaTiO3 (BTO) thin films and its influence on the ferroelectric hysteresis loops and the leakage currents.
We performed detailed experiments to distinguish between the different types of defects by varying the pulsed laser deposition (PLD) parameters and the post annealing conditions. Furthermore, systematic studies of the influence of the growth kinetics on the oxygenation state of the thin films were performed and related to defect chemistry models. These investigations were complemented by high resolution transmission electron microscopy analysis of the atomic structure of the thin films and different types of electrode interfaces.
We succeeded to obtain closed hysteresis loops with a remanent polarization of 30µC/cm2 for a 30nm thick BTO thin films stacked between SrRuO3 and Pt electrodes.