Berlin 2012 – wissenschaftliches Programm
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DF: Fachverband Dielektrische Festkörper
DF 13: Poster II
DF 13.17: Poster
Mittwoch, 28. März 2012, 15:00–17:30, Poster E
Heat relaxation and transport in dielectrics: the density dependent two temperature model — •Anika Scholtes1, Orkhan Osmani1,2, and Bärbel Rethfeld1 — 1TU Kaiserslautern, 67663 Kaiserslautern, Germany — 2Universität Duisburg-Essen, 47048 Duisburg, Germany
During the irradiation of dielectrics and semiconductors with a laser pulse or a swift heavy ion, electrons are excited from the valence band into the conduction band, thus creating electron-hole-pairs. The excited electronic system interacts with the phononic system by electron-phonon-coupling. For laser-irradiated metals, the two temperature model (TTM) introduced in [1] describes the temporal and spatial evolution of electronic and phononic temperature. Considering dielectrics and semiconductors with an initially negligible free electron density, it is also important to account for the transient electronic density in the conduction band. A first approach to obtain the evolution of the phononic as well as the electronic temperature, which also accounts for the change in the density, was given in [2]. Here, we modified this approach to fully account for the energy conservation and present the influence of the impact ionization and Auger recombination on the electronic density and temperature dynamics for the case of laser-irridiation of Silicon.
[1] S.I. Anisimov, B.L. Kapeliovich, and T.L. Perel’man. Sov. Phys. JETP 39, 375 (1974).
[2] H.M. van Driel. Phys. Rev. B 35, 8166 (1987).