Berlin 2012 – wissenschaftliches Programm

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DF: Fachverband Dielektrische Festkörper

DF 13: Poster II

DF 13.7: Poster

Mittwoch, 28. März 2012, 15:00–17:30, Poster E

Verzögerte Kristallisation ultradünner Gd2O3 Schichten auf Si(111) beobachtet mittels in-situ Röntgenbeugung — •Michael Hanke, Vladimir Kaganer, Oliver Bierwagen, Michael Niehle und Achim Trampert — Paul-Drude-Institut Für Festkörperelektronik, Hausvogteiplatz 5-7, D-10117 Berlin

We studied the early stages of Gd2O3 epitaxy on Si(111) in real time by synchrotron-based in-situ high resolution x-ray diffraction and by reflection high-energy electron diffraction. A comparison between model calculations and the measured x-ray scattering, and the change of reflection high-energy electron diffraction patterns both indicate that the growth begins without forming a threedimensional crystalline film since the very first monolayers are not in perfect registry among each other. A cubic bixbyite structure of Gd2O3 appears only after a few monolayers of deposition.