Berlin 2012 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 1: Layer properties: electrical, optical, and mechanical properties

DS 1.5: Vortrag

Montag, 26. März 2012, 10:30–10:45, H 0111

Influence of ion beam and geometrical parameters on properties of Si thin films grown by Ar ion beam sputtering — •Carsten Bundesmann, René Feder, and Horst Neumann — Leibniz-Institut für Oberflächenmodifizierung e.V., Permoserstr. 15, 04318 Leipzig, Germany

Ion beam sputtering (IBS) offers, in contrast to other physical vapour deposition techniques, such as magnetron sputtering or electron beam evaporation, the opportunity to change the properties of the layer forming particles (sputtered and scattered particles) by varying ion beam parameters (ion species, ion energy) and geometrical parameters (ion incidence angle, emission angle). Consequently, these effects can be utilized to tailor thin film properties [1].

The goal is to study systematically the correlations between the primary and secondary parameters and, at last, the effects on the properties of Si thin films, such as optical properties, stress, surface topography and composition. First experimental results are presented for Ar-ion sputtering of Si.

Financial support by DFG within project BU2625/1-1 is gratefully acknowledged.

[1] C. Bundesmann, I.-M. Eichentopf, S. Mändl, and H. Neumann; Thin Solid Films 516, 8604-8608 (2008).