Berlin 2012 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 22: Trends in atomic layer deposition I (Focused session – Organizer: Nielsch)

DS 22.1: Hauptvortrag

Mittwoch, 28. März 2012, 15:00–15:30, H 0111

Trends in Atomic Layer Deposition — •Helmut Baumgart — Dept. of Electrical and Computer Engineering, Old Dominion University, Norfolk, Virginia 53529, USA — Applied Research Center at Thomas Jefferson National Accelerator Labs, Newport News, Virginia 23606, USA

Atomic Layer Deposition (ALD) is recognized by the International Technology Roadmap for Semiconductors (ITRS) as the preferred method to deposit technologically important thin films of novel high-k dielectric metal oxides or semiconducting metal oxides for CMOS and MEMS technology with Angstrom accuracy. ALD has been accepted by the microelectronics industry for mainstream Integrated Circuit (IC) processing technology primarily for high-k and metal gate stack engineering and DRAM capacitor development. Continuous device scaling serves as the technology driver and the trend is to develop very high-k oxides by ALD such as perovskites for future applications. In order to extend Moore*s Law another trend in CMOS technology is the increased interest in 3-D devices such as FIN-FETs and nanowire MOSFETs, which call for ALD technology for the realization of Gate-All-Around structures. There is an increasing demand for new and more complex nano-scaled films that are deposited with uniform composition, high conformality and superior thickness accuracy over increasingly severe surface topographies with high aspect ratios. An overview of recent trends in ALD thin film technology will be presented with examples in IC and non IC applications.